SIA923EDJ-T1-GE3 datasheet

Маркировка

SIA923EDJ-T1-GE3
Производитель

Vishay Intertechnology
Описание

Vishay Intertechnology SIA923EDJ-T1-GE3 Configuration: Dual Continuous Drain Current: - 4.5 A Current - Continuous Drain (id) @ 25?° C: 4.5A Drain To Source Voltage (vdss): 20V Drain-source Breakdown Voltage: - 20 V Fet Feature: Logic Level Gate Fet Type: 2 P-Channel (Dual) Forward Transconductance Gfs (max / Min): 11 S Gate Charge (qg) @ Vgs: 25nC @ 8V Gate Charge Qg: 16.3 nC Gate-source Breakdown Voltage: 8 V ID_COMPONENTS: 1715445 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: PowerPAK?® SC-70-6 Dual Power - Max: 7.8W Power Dissipation: 1.9 W Rds On (max) @ Id, Vgs: 54 mOhm @ 3.8A, 4.5V Resistance Drain-source Rds (on): 0.044 Ohms Series: TrenchFET?® Transistor Polarity: Dual P-Channel Vgs(th) (max) @ Id: 1.4V @ 250?µA RoHS: yes Drain-Source Breakdown Voltage: - 20 V Gate-Source Breakdown Voltage: 8 V Resistance Drain-Source RDS (on): 54 mOhms at 4.5 V Forward Transconductance gFS (Max / Min): 11 S Part # Aliases: SIA923EDJ-GE3 Other Names: SIA923EDJ-T1-GE3TR
Количество страниц

7 шт.
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